Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide.

A nonvolatile optical phase shifter is a critical component for enabling the fabrication of programmable photonic integrated circuits on a Si photonics platform, facilitating communication, computing, and sensing. Although ferroelectric materials such as BaTiO offer nonvolatile optical phase shift capabilities, their compatibility with complementary metal-oxide-semiconductor fabs is limited. HfZrO is an emerging ferroelectric material, which exhibits complementary metal-oxide-semiconductor compatibility.

Design of compact and low-loss S-bends by CMA-ES.

We employ the covariance matrix adaptation evolution strategy (CMA-ES) algorithm to design compact and low-loss S-bends on the standard silicon-on-insulator platform. In line with the CMA-ES-based approach, we present experimental results demonstrating insertion losses of 0.041 dB, 0.

The Symplectic Adjoint Method: Memory-Efficient Backpropagation of Neural-Network-Based Differential Equations.

The combination of neural networks and numerical integration can provide highly accurate models of continuous-time dynamical systems and probabilistic distributions. However, if a neural network is used n times during numerical integration, the whole computation graph can be considered as a network n times deeper than the original. The backpropagation algorithm consumes memory in proportion to the number of uses times of the network size, causing practical difficulties.

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths.

A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 10A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor operating at a 1.