Strain-Induced Modulation of Resistive Switching Temperature in Epitaxial VO Thin Films on Flexible Synthetic Mica.

The resistive switching temperature associated with the metal-insulator transition (MIT) of epitaxial VO thin films grown on flexible synthetic mica was modulated by bending stress. The resistive switching temperature of polycrystalline VO and VO thin films, initially grown on synthetic mica without a buffer layer, was observed not to shift with bending stress. By inserting a SnO buffer layer, epitaxial growth of the VO (010) thin film was achieved, and the MIT temperature was found to vary with the bending stress.