Tuning of tunnel resistance of nanogaps by field-emission-induced electromigration using current source mode.

A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" and is demonstrated with a current source. Planar-type initial nanogaps of Ni separated by 20-80 nm were defined on SiO2/Si substrates via electron-beam lithography and the lift-off process.

Integration of single-electron transistors using field-emission-induced electromigration.

A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called "activation.

Influence of feedback parameters on resistance control of metal nanowires by stepwise feedback-controlled electromigration.

We propose a stepwise feedback-controlled electromigration (SFCE) approach to control the channel resistance of metal nanowires at room temperature. SFCE procedure finely divides a conventional feedback-controlled electromigration (FCE) scheme into several FCE cycles. This approach effectively removes thermal instability caused by large current passing through a metal nanowire, because process time of each FCE cycle can be successfully reduced.

Fabrication of single-electron transistors using field-emission-induced electromigration.

We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called "activation" and is demonstrated using arrow-shaped Ni nanogap electrodes with initial gap separations of 21-68 nm. Using the activation method, we are easily able to obtain the SETs by Fowler-Nordheim (F-N) field emission current passing through the nanogap electrodes.