Characterization of Single Defects in Ultrascaled MoS Field-Effect Transistors.

MoS has received a lot of attention lately as a semiconducting channel material for electronic devices, in part due to its large band gap as compared to that of other 2D materials. Yet, the performance and reliability of these devices are still severely limited by defects which act as traps for charge carriers, causing severely reduced mobilities, hysteresis, and long-term drift. Despite their importance, these defects are only poorly understood.

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.

Black phosphorus has been recently suggested as a very promising material for use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS. We show that the recently demonstrated AlO encapsulation leads to highly stable devices.