High Gain, Low Voltage Solar-Blind Deep UV Photodetector Based on GaO/(AlGa)O/GaN nBp Heterojunction.

In this study an (AlGa)O barrier layer is inserted between β-GaO and GaN in a p-GaN/n-GaO diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-GaO/β-(AlGa)O/GaN n-type/Barrier/p-type photodetector achieves a photocurrent gain of 1246, responsivity of 237 A W, and specific detectivity of 5.23 × 10 cm Hz W under a bias of -20 V.

Enhanced Performance of Self-Powered GaO/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity.

Ferroelectric materials have aroused increasing interest in the field of self-powered ultraviolet (UV) photodetectors (PDs) for their switchable spontaneous polarization. However, the utilization of ferroelectric materials to modulate the built-in electric field and energy band at the junction interface has rarely been investigated. Herein, we design and fabricate self-powered solar-blind UV PDs based on a GaO/ZnO:V heterojunction.

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-GaO Thin Films Grown on -Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition.

We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from β-GaO thin films grown via metal-organic chemical vapor deposition (MOCVD) on -Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality β-GaO films with a (-201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.

Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa O :N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method.

This work reports a high-detectivity solar-blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen-doped graphene/βGa O /GaN p-i-n heterojunction. The i layer of βGa O with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole.

Ultrahigh Detectivity Broad Spectrum UV Photodetector with Rapid Response Speed Based on p-β Ga O /n-GaN Heterojunction Fabricated by a Reversed Substitution Doping Method.

An excellent broad-spectrum (220-380 nm) UV photodetector, covering the UVA-UVC wavelength range, with an ultrahigh detectivity of ≈10  cm Hz W , is reported. It is based on a p-β Ga O /n-GaN heterojunction, in which p-β Ga O is synthesized by thermal oxidation of GaN and a heterostructure is constructed with the bottom n-GaN. XRD shows the oxide layer is (-201) preferred oriented β-phase Ga O films.

Physicochemical characteristics and gel-forming properties of myofibrillar protein in an oxidative system affected by partial substitution of NaCl with KCl, MgCl or CaCl.

Effects of partial substitution of NaCl with KCl, MgCl or CaCl on oxidative characteristics of myofibrillar protein (MP) in a hydroxyl radical generating system and their heat-induced gel properties were investigated. Results indicated that MP oxidation is dependent upon the different chloride salt types and substitution degree. MP at 0.

[Effects of NO3- stress on photosynthetic characteristics and nitrogen metabolism of strawber- ry seedlings].

In order to explore the effects of NO3- stress on photosynthetic characteristics and nitrogen metabolism, strawberry seedlings were grown in sand culture condition under different concentrations of NO3- (64, 112 and 160 mmol · L(-1)) with the control of 16 mmol NO3- · L(-1). The results indicated that at the 8th day after treatment, with the increased NO3- concentration, the strawberry leaf net photosynthetic rate (Pn), stomatal conductance (g(s)), PS II actual photochemical efficiency (ΦPS II), PS II maximum photochemical efficiency (Fv/Fm), and photochemical quenching coefficient (q(P)) significantly decreased, and decreased by 67.7%, 68.

[Effects of NO3- stress on cucumber seedling growth and magnesium absorbing under suboptimal temperature].

The effects of NO3- stress on the growth and the magnesium absorption of cucumber seedlings were investigated after 1 and 14 d of suboptimal temperature [18 °C/12 °C (day/night)] treatment. The results indicated that the growth, net photosynthetic rate, transpiration rate, Fv/Fm and ΦPSII of cucumber seedlings were significantly inhibited by NO3- stress under suboptimal temperature. The magnesium content of cucumber seedlings was also significantly decreased compared with control treatment, especially in the IV treatment (suboptimal temperature +140 mmol · L(-1) NO3- + 1 mmol · L(-1) Mg2+), and the antagonistic impact of magnesium ion absorption on the absorption of potassium and calcium ion was observed.

[Effects of different NO3- concentrations on the growth and antioxidant enzyme systems of strawberry seedlings].

The effects of different NO3- concentrations (CK, 16 mmol x L(-1) NO3-; T1, 48 mmol x L(-1) NO3-; T2, 96 mmol x L(-1) NO3-; T3, 144 mmol x L(-1) NO3-) on the growth properties and antioxidant enzymes activities of strawberry seedlings were studied by sand culture. The results indicated that the plant height, leaf area, dry matter accumulation and root/shoot ratio of strawberry seedlings in T1, T2 and T3 were significantly decreased compared to the control (CK) after 15 days of treatment. The plant heights in T1, T2 and T3 decreased by 16.