Electronic structure and charge transport mechanism in a forming-free SiO -based memristor.

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated.