Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.

GaSb quantum dots (QDs) have been grown by droplet epitaxy within InAlAs barrier layers on an InP (001) substrate. The droplet growth mode facilitates a larger size (average height ∼4.5 nm) and a lower density (∼6.

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness.

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude.