Photovoltaic device on a single ZnO nanowire p-n homojunction.

A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions.