Bulk intermixing-type perovskite CH₃NH₃PbI₃/TiO₂ nanorod hybrid solar cells.

To replace high-temperature sintered scaffold materials in conventional CH3NH3PbI3-based solar cells, this study demonstrates a new device structure of a bulk intermixing (BI)-type CH3NH3PbI3/TiO2 nanorod (NR) hybrid solar cell, where dispersed TiO2 NRs from chemical synthesis are intermixed with the perovskite absorbing layer to form a BI-type perovskite/TiO2 NR hybrid for device fabrication. Through interface engineering between the TiO2 NR surface and the photoactive perovskite material of CH3NH3PbI3 by ligand exchange treatment, a remarkable power conversion efficiency (PCE) of over 12% was achieved based on the simple BI-type CH3NH3PbI3/TiO2 NR hybrid device structure. The proposed hybrids not only provide great flexibility for deposition on various substrates through spin coating at low temperatures but also enable layer-by-layer deposition for the future development of perovskite-based multi-junction solar cells.

Layer-by-layer thin film of reduced graphene oxide and gold nanoparticles as an effective sample plate in laser-induced desorption/ionization mass spectrometry.

This work demonstrated a simple platform for rapid and effective surface-assisted laser desorption/ionization time-of-flight mass spectrometry (SALDI-TOF MS) measurements based on the layer structure of reduced graphene oxide (rGO) and gold nanoparticles. A multi-layer thin film was fabricated by alternate layer-by-layer depositions of rGO and gold nanoparticles (LBL rGO/AuNP). The flat and clean two-dimensional film was served as the sample plate and also functioned as the matrix in SALDI-TOF MS.

Clean-lifting transfer of large-area residual-free graphene films.

A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT technique without using any organic support or adhesives can produce residual-free graphene films with large-area processability, and has great potential for future industrial production of graphene-based electronics or optoelectronics.

Interactions between fluorescence of atomically layered graphene oxide and metallic nanoparticles.

Graphene oxide (GO) demonstrates interesting photoluminescence (PL) because of its unique heterogeneous atomic structure, which consists of variable sp(2)- and sp(3)-bonded carbons. In this study, we report the interaction between the luminescence of GO ranging from a single atomic layer to few-layered thin films and localized surface plasmon resonance (LSPR) from silver nanoparticles (Ag NPs). The photoluminescence of GO in the vicinity of the Ag NPs is enhanced significantly due to the near-field plasmonic effect by coupling electron-hole pairs of GO with oscillating electrons in Ag NPs, leading to an increased PL intensity and a decreased PL decay lifetime.

Enhancement of laser action in ZnO nanorods assisted by surface plasmon resonance of reduced graphene oxide nanoflakes.

We report the discovery of an enhancement of the random laser action in a nanocomposite comprising reduced graphene oxide nanoflakes and ZnO nanorods. We show that both emission intensity and lasing threshold exhibit an obvious improvement. Based on our theoretical calculations, the mechanism underlying the enhanced stimulated emission can be attributed to coupling between the optical transition and the surface plasmon resonance of the reduced graphene oxide nanoflakes, induced by the ZnO nanorod surface roughness.

Enhancement of laser action in ZnO nanorods assisted by surface plasmon resonance of reduced graphene oxide nanoflakes.

We report the discovery of an enhancement of the random laser action in a nanocomposite comprising reduced graphene oxide nanoflakes and ZnO nanorods. We show that both emission intensity and lasing threshold exhibit an obvious improvement. Based on our theoretical calculations, the mechanism underlying the enhanced stimulated emission can be attributed to coupling between the optical transition and the surface plasmon resonance of the reduced graphene oxide nanoflakes, induced by the ZnO nanorod surface roughness.

Self-encapsulated doping of n-type graphene transistors with extended air stability.

This paper presents an innovative approach to fabricating controllable n-type doping graphene transistors with extended air stability by using self-encapsulated doping layers of titanium suboxide (TiOx) thin films, which are an amorphous phase of crystalline TiO(2) and can be solution processed. The nonstoichiometry TiOx thin films consisting of a large number of oxygen vacancies exhibit several unique functions simultaneously in the n-type doping of graphene as an efficient electron-donating agent, an effective dielectric screening medium, and also an encapsulated layer. A novel device structure consisting of both top and bottom coverage of TiOx thin layers on a graphene transistor exhibited strong n-type transport characteristics with its Dirac point shifted up to -80 V and an enhanced electron mobility with doping.