Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO ALD passivation.

Micro light-emitting diodes (µLEDs), crucial for advanced displays and communication systems, face efficiency challenges due to sidewall defects. This study investigates the impact of various passivation layers, including SiO, AlO, and HfO, on AlGaInP-based 620 nm red µLEDs. We fabricated devices with two mesa sizes and demonstrated that atomic layer deposition (ALD) passivation, especially with HfO, significantly enhances performance.

26.5625 Gbaud PAM-4 short-reach transmission at 75°C using 850 nm VCSELs with strategic oxide guiding layer positioning.

This article presents an all-epitaxy approach to reduce the root mean square spectral width (Δλ) of 850 nm oxide-confined vertical cavity surface-emitting lasers (VCSELs) with a large aperture of 7 µm through strategic optimization of the oxide guiding layer within the epitaxy structure. At 75°C, the VCSEL demonstrates a Δλ of ∼0.3 nm at a bias current of 7.

Monolithically integrated 940 nm VCSELs on bulk Ge substrates.

This research successfully developed an independent Ge-based VCSEL epitaxy and fabrication technology route, which set the stage for integrating AlGaAs-based semiconductor devices on bulk Ge substrates. This is the second successful Ge-based VCSEL technology reported worldwide and the first Ge-based VCSEL technology with key details disclosed, including Ge substrate specification, transition layer structure and composition, and fabrication process. Compared with the GaAs counterparts, after epitaxy optimization, the Ge-based VCSEL wafer has a 40% lower surface root-mean-square roughness and 72% lower average bow-warp.

25 Gb/s NRZ transmission at 85°C using a high-speed 940 nm AlGaAs oxide-confined VCSEL grown on a Ge substrate.

In this Letter, we present a comprehensive analysis of the high-speed performance of 940 nm oxide-confined AlGaAs vertical-cavity surface-emitting lasers (VCSELs) grown on Ge substrates. Our demonstration reveals a pronounced superiority of Ge-based VCSELs in terms of thermal stability. The presented Ge-VCSEL has a maximum modulation bandwidth of 16.

Zone-addressable 20 × 20 940 nm VCSEL array with a 5-bit binary number pattern.

This article presents a monolithically zone-addressable 20 × 20 940 nm vertical-cavity surface-emitting laser (VCSEL) array with a binary number pattern design for sensing applications. The emitters in this VCSEL array have a uniquely designed binary pattern design, with each row representing a 5-bit pattern designed to aid pattern-matching algorithms to deduce the shape and depth information efficiently. Approximately 200 VCSELs are arranged in four individually addressable light-emitting zones, with ∼50 emitters in each zone.