A simple and convenient method for the formation of Pt nanoparticulate films as a sensing material by controlling deposition rates is demonstrated to realize AlGaN/GaN high electron mobility transistor-based high-sensitivity hydrogen gas sensors. The Pt nanoparticulate films produced at a low deposition rate (Sample 1: 0.3 Å/s) exhibit a smooth surface and uniformly sized Pt grains, while the films produced at a high deposition rate (Sample 2: 1.
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