Sharp, near band gap lines are observed in the reflection and photoluminescence spectra of GaAs/AlGaAs structures consisting of a modulation doped quantum well (MDQW) that contains a high density two-dimensional electron gas (2DEG) and is embedded in a microcavity (MC). The energy dependence of these lines on the MC-confined photon energy shows level anticrossings and Rabi splittings very similar to those observed in systems of undoped QW's embedded in a MC. The spectra are analyzed by calculating the optical susceptibility of the MDQW in the near band gap spectral range and using it within the transfer matrix method.
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