Improved power and temperature performance of half-disk diode microlasers.

The power and temperature characteristics of Ø200 µm half-disk microlasers with a half-ring metal contact and high-density InGaAs/GaAs quantum dots are studied. In a continuous wave (CW) mode, the maximal optical power at 20°C was 134 mW, and the maximal CW lasing temperature reached 113°C. In a pulsed regime the maximal optical power of 1.

Fast switching between the ground- and excited-state lasing in a quantum-dot microdisk triggered by sub-ps pulses.

A quantum-dot microdisk was optically pumped by continuous-wave excitation with a level sufficient for the ground-state lasing. The microdisk was additionally illuminated with sub-ps pulses of various powers. It was found that there is a critical level of pulse power that determines the subsequent transient process of the microlaser.

Single-Exciton Photoluminescence in a GaN Monolayer inside an AlN Nanocolumn.

GaN/AlN heterostructures with thicknesses of one monolayer (ML) are currently considered to be the most promising material for creating UVC light-emitting devices. A unique functional property of these atomically thin quantum wells (QWs) is their ability to maintain stable excitons, resulting in a particularly high radiation yield at room temperature. However, the intrinsic properties of these excitons are substantially masked by the inhomogeneous broadening caused, in particular, by fluctuations in the QWs' thicknesses.

Towards Bright Single-Photon Emission in Elliptical Micropillars.

In recent years, single-photon sources (SPSs) based on the emission of a single semiconductor quantum dot (QD) have been actively developed. While the purity and indistinguishability of single photons are already close to ideal values, the high brightness of SPSs remains a challenge. The widely used resonant excitation with cross-polarization filtering usually leads to at least a two-fold reduction in the single-photon counts rate, since single-photon emission is usually unpolarized, or its polarization state is close to that of the exciting laser.

Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm.

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600  A/cm (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates.