Graphene and Carbon Nanotube Heterojunction Transistors with Individual Gate Control.

Heterogeneously integrated nanomaterial devices show interesting characteristics for transistors and sensors due to their band diagram or steep material junctions. If these junctions and band alignments can be tuned by an electrical input bias, the device platform not only could be expanded but also could be used to explore fundamental characteristics. However, most reports on hetero-nanomaterial junctions use a global back-gate voltage, which makes it difficult to control band alignment at an interface.

Resonance Control of a Graphene Drum Resonator in a Nonlinear Regime by a Standing Wave of Light.

We demonstrate the control of resonance characteristics of a drum-type graphene mechanical resonator in a nonlinear oscillation regime using the photothermal effect, which is induced by a standing wave of light between graphene and a substrate. Unlike the resonance characteristics of a conventional Duffing-type nonlinearity, those of the nonlinear oscillation regime are modulated by the standing wave of light with a contribution of the scattered light of an actuation laser, despite a slight variation of amplitude. Numerical calculations conducted with a combination of equations of heat and motion with the Duffing-type nonlinearity explain this modulation: the photothermal effect delays the modulation of graphene stress or tension.