Photoresponse of graphene field-effect-transistor with n-type Si depletion layer gate.

Graphene/semiconductor Schottky junctions are an emerging field for high-performance optoelectronic devices. This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. To analyze the photoresponse, we formulate the charge accumulation process at the n-Si/graphene interface, where the tunneling process through the SiO layer to graphene occurs along with recombination of the accumulated holes and the electrons in the graphene at the surface states on the SiO layer.

Resonance Control of a Graphene Drum Resonator in a Nonlinear Regime by a Standing Wave of Light.

We demonstrate the control of resonance characteristics of a drum-type graphene mechanical resonator in a nonlinear oscillation regime using the photothermal effect, which is induced by a standing wave of light between graphene and a substrate. Unlike the resonance characteristics of a conventional Duffing-type nonlinearity, those of the nonlinear oscillation regime are modulated by the standing wave of light with a contribution of the scattered light of an actuation laser, despite a slight variation of amplitude. Numerical calculations conducted with a combination of equations of heat and motion with the Duffing-type nonlinearity explain this modulation: the photothermal effect delays the modulation of graphene stress or tension.

Highly photosensitive graphene field-effect transistor with optical memory function.

Graphene is a promising material for use in photodetectors for the ultrawide wavelength region: from ultraviolet to terahertz. Nevertheless, only the 2.3% light absorption of monolayer graphene and fast recombination time of photo-excited charge restrict its sensitivity.