Large lateral photovoltaic effect with ultrafast optical relaxation time in SnS/n-Si junctions.

A large lateral photovoltaic effect (LPE) with a fast optical response time is necessary to develop high-performance position-sensitive detectors. In this paper, we report an LPE with a high self-powered position sensitivity and ultrafast optical relaxation time in /- junctions prepared using pulsed laser deposition. A large built-in electric field was generated at the / interface, which resulted in a large LPE with a positional sensitivity of up to 116 mV/mm.