Synergistic Crystallization Modulation and Defects Passivation in Kesterite via Anion-Coordinate Precursor Engineering for Efficient Solar Cells.

It has been validated that enhancing crystallinity and passivating the deep-level defect are critical for improving the device performance of kesterite CuZnSn(S,Se) (CZTSSe) solar cells. Coordination chemistry interactions within the Cu-Zn-Sn-S precursor solution play a crucial role in the management of structural defects and the crystallization kinetics of CZTSSe thin films. Therefore, regulating the coordination environment of anion and cation in the precursor solution to control the formation process of precursor films is a major challenge at present.

2D TiC-MXene Serving as Intermediate Layer between Absorber and Back Contact for Efficient CZTSSe Solar Cells.

Kesterite CuZnSn(S,Se) (CZTSSe) has been considered as the most promising absorber material for inorganic thin-film solar cells. Among the three main interfaces in CZTSSe-based solar cells, the CZTSSe/Mo back interface plays an essential role in hole extraction as well as device performance. During the selenization process, the reaction between CZTSSe and Mo is one of the main reasons that lead to a large open circuit voltage () deficit, low short circuit current (), and fill factor.

Passivating Grain Boundaries via Graphene Additive for Efficient Kesterite Solar Cells.

Grain boundaries (GBs)-triggered severe non-radiative recombination is recently recognized as the main culprits for carrier loss in polycrystalline kesterite photovoltaic devices. Accordingly, further optimization of kesterite-based thin film solar cells critically depends on passivating the grain interfaces of polycrystalline Cu ZnSn(S,Se) (CZTSSe) thin films. Herein, 2D material of graphene is first chosen as a passivator to improve the detrimental GBs.

Progress and prospectives of solution-processed kesterite absorbers for photovoltaic applications.

Solar cells based on emerging kesterite CuZnSn(S,Se) (CZTSSe) materials have reached certified power conversion efficiency (PCE) as high as 13.6%, showing great potential in the next generation of photovoltaic technologies because of their earth-abundant, tunable direct bandgap, high optical absorption coefficient, environment-friendly, and low-cost properties. The predecessor of CZTSSe is Cu(In,Ga) Se (CIGS), and the highest PCE of CIGS fabricated by the vacuum method is 23.

Suppressing interface recombination in CZTSSe solar cells by simple selenization with synchronous interface gradient doping.

The main bottleneck in the development of kesterite CuZnSn(S,Se) (CZTSSe) solar cells is their very low due to severe carrier recombination. Specifically, due to the poor defect environment and unfavorable band structure, carrier recombination at the front interface is considered to be one of the most serious issues. Thus, to reduce the interface recombination and deficit, we propose a convenient and effective strategy for Cd gradient doping near the front interface during selenization.

Over 16% Efficient Solution-Processed Cu(In,Ga)Se Solar Cells via Incorporation of Copper-Rich Precursor Film.

Solution processing of Cu(In,Ga)Se (CIGS) absorber is a highly promising strategy for a cost-effective CIGS photovoltaic device. However, the device performance of solution-processed CIGS solar cells is still hindered by the severe non-radiative recombination resulting from deep defects and poor crystal quality. Here, a simple and effective precursor film engineering strategy is reported, where Cu-rich (CGI >1) CIGS layer is incorporated into the bottom of the CIGS precursor film.

Plasmonic Local Electric Field-Enhanced Interface toward High-Efficiency CuZnSn(S,Se) Thin-Film Solar Cells.

The kesterite CuZnSn(S,Se) (CZTSSe) solar cells have shown a continuous rise in power conversion efficiencies in the past years. However, the encountered interfacial problems with respect to charge recombination and extraction losses at the CdS/CZTSSe heterojunction still hinder their further development. In this work, an additional plasmonic local electric field is imposed into the CdS/CZTSSe interface through the electrostatic assembly of a two-dimensional (2D) ordered Au@SiO NP array onto an aminosilane-modified surface absorber.

Enhancing Grain Growth for Efficient Solution-Processed (Cu,Ag)ZnSn(S,Se) Solar Cells Based on Acetate Precursor.

Material crystallinity is the overriding factor in the determination of the photoelectric properties of absorber materials and the overall performance of the photovoltaic device. Nevertheless, in the CuZnSn(S,Se) (CZTSSe) photovoltaic device, the bilayer or trilayer structure for the absorber has been broadly observed, which is generally harmful to the cell performance because the probability of photogenerated carrier recombination at grain boundaries significantly increased. Herein, our experiment reveals that the application of anions to a new family of (Cu,Ag)ZnSn(S,Se) (CAZTSSe) materials leads to an increase in grain size and crystallinity.

Se-Assisted Performance Enhancement of CuZnSn(S,Se) Quantum-Dot Sensitized Solar Cells via a Simple Yet Versatile Synthesis.

The earth-abundant CuZnSnS (CZTS) quantum dots (QDs) have emerged as one potential substitute to toxic cadmium or rare indium QDs, but their application in quantum dot-sensitized solar cells (QDSSCs) is still limited by the improper particle size and the rigorous synthesis and ligand exchange conditions. Herein, we developed a one-pot hot injection method by using Tri-n-octylphosphine oxide (TOPO) as the solvent and oleylamine as the capping agent to synthesize CuZnSn(S,Se) (CZTSSe) QDs with adjustable size and narrow size distribution. The key feature of this approach is that we can take advantage of the high-temperature nucleation, low-temperature growth, and strong reducibility of NaHB to prepare small-sized CZTSSe QDs without using 1-dodecanethiol (DDT) and to extend the light harvesting range through Se incorporation.

ZnO nanotubes supported molecularly imprinted polymers arrays as sensing materials for electrochemical detection of dopamine.

In this study, ZnO nanotubes (ZNTs) were prepared onto fluorine-doped tin oxide (FTO) glass and used as supports for MIPs arrays fabrication. Due to the imprinted cavities are always located at both inner and outer surface of ZNTs, these ZNTs supported MIPs arrays have good accessibility towards template and can be used as sensing materials for chemical sensors with high sensitivity, excellent selectivity and fast response. Using K[Fe(CN)] as electron probe, the fabricated electrochemical sensor shows two linear dynamic ranges (0.

Elemental Precursor Solution Processed (CuAg)ZnSn(S,Se) Photovoltaic Devices with over 10% Efficiency.

The partial substitution of Cu with Ag into the host lattice of CuZnSn(S,Se) thin films can reduce the open-circuit voltage deficit (V) of CuZnSn(S,Se) (CZTSSe) solar cells. In this paper, elemental Cu, Ag, Zn, Sn, S, and Se powders were dissolved in solvent mixture of 1,2-ethanedithiol (edtH) and 1,2-ethylenediamine (en) and used for the formation of (CuAg)ZnSn(S,Se) (CAZTSSe) thin films with different Ag/(Ag + Cu) ratios. The key feature of this approach is that the impurity atoms can be absolutely excluded.

Nitrogen-doped graphene aerogels as efficient supercapacitor electrodes and gas adsorbents.

Nitrogen-doped graphene has been demonstrated to be an excellent multifunctional material due to its intriguing features such as outstanding electrocatalytic activity, high electrical conductivity, and good chemical stability as well as wettability. However, synthesizing the nitrogen-doped graphene with a high nitrogen content and large specific surface area is still a challenge. In this study, we prepared a nitrogen-doped graphene aerogel (NGA) with high porosity by means of a simple hydrothermal reaction, in which graphene oxide and ammonia are adopted as carbon and nitrogen source, respectively.

High-performance all-carbon yarn micro-supercapacitor for an integrated energy system.

Single-walled carbon nanotubes and chitosan composite yarn is prepared using a wet-spinning method. After thermal treatment, mesoporous all-carbon yarn is obtained. Based on this material, flexible all-solid-state yarn micro-supercapacitors are fabricated.

Flexible and binder-free organic cathode for high-performance lithium-ion batteries.

Fabrication of a flexible organic electrode by growing polyimide nanoflakes on single-wall carbon nanotube films is presented. The flexible electrode exhibits high capacity and outstanding rate capability. This electrode is promising for the application in high-power flexible lithium-Ion batteries.

Hierarchical porous graphene/polyaniline composite film with superior rate performance for flexible supercapacitors.

A highly flexible graphene free-standing film with hierarchical structure is prepared by a facile template method. With a porous structure, the film can be easily bent and cut, and forms a composite with another material as a scaffold. The 3D graphene film exhibits excellent rate capability and its capacitance is further improved by forming a composite with polyaniline nanowire arrays.

Conducting polymer nanowire arrays for high performance supercapacitors.

This Review provides a brief summary of the most recent research developments in the fabrication and application of one-dimensional ordered conducting polymers nanostructure (especially nanowire arrays) and their composites as electrodes for supercapacitors. By controlling the nucleation and growth process of polymerization, aligned conducting polymer nanowire arrays and their composites with nano-carbon materials can be prepared by employing in situ chemical polymerization or electrochemical polymerization without a template. This kind of nanostructure (such as polypyrrole and polyaniline nanowire arrays) possesses high capacitance, superior rate capability ascribed to large electrochemical surface, and an optimal ion diffusion path in the ordered nanowire structure, which is proved to be an ideal electrode material for high performance supercapacitors.