Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers.

The growth of cubic boron nitride (cBN) films on bare silicon and amorphous tetrahedral carbon (ta-C) layers prepared on silicon substrates was studied. The cBN films were prepared by radio frequency magnetron sputter deposition at approximately 870 degrees C. The original ta-C interlayers were graphitized and restructured under high temperature and possibly under ion bombardment during BN deposition.