Secure space division multiplexing system based on multi-channel chaos random encryption with synchronized Fabry-Perot lasers.

Chaotic optical communication has recently garnered considerable research interest for providing physical layer security. In this work, we propose and demonstrate a secure space-division-multiplexing (SDM) system based on multi-channel chaos random en/decryption with remotely synchronized Fabry-Perot (FP) lasers. By a random combination of multi-longitudinal modes from the FP lasers, multi-channel low-correlated chaotic signals can be produced and then utilized for encrypting the confidential data, which effectively provides multiple possibilities of optical encryption from a single chaotic laser source.

Physical layer security--enhanced optical communication based on chaos masking and chaotic hardware encryption.

The security and confidentiality of information are crucial in contemporary communication systems. In this work, we propose a physical layer security-enhanced optical communication scheme based on dual-level protection with chaos masking (CMS) and chaotic hardware encryption. The integration of CMS and chaotic hardware encryption contributes to enhancing the security of the system.

High-speed secure key distribution based on interference spectrum-shift keying with signal mutual modulation in commonly driven chaos synchronization.

The secure key generation and distribution (SKGD) are unprecedentedly important for a modern secure communication system. This paper proposes what we believe to be a novel scheme of high-speed key distribution based on interference spectrum-shift keying with signal mutual modulation in commonly driven chaos synchronization. In this scheme, delay line interferometers (DLI) are utilized to generate two low-correlation interference spectra from commonly driven synchronous chaos, and then a 2 × 2 optical switch can effectively change the relationship between the two interference spectra in post-processing by shifting the states of the switch.

Bipolar resistive switching of Pt/GaO/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios.

A multiple-layer thin film of Pt/GaO/SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 10. The current-voltage relations plot implies the Ohmic conductance of the ON state, while the space and interface charge limited the current of the OFF state.

Enhanced Resistance Switching of Ga₂O₃ Thin Films by Ultraviolet Radiation.

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments.

Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1-xFex)2O3 multilayer thin films.

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1-xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site.