A Fully Transparent Resistive Memory for Harsh Environments.

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation.

Solar-blind photodetectors for harsh electronics.

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs.

Creation of high density ensembles of nitrogen-vacancy centers in nitrogen-rich type Ib nanodiamonds.

This work explores the possibility of increasing the density of negatively charged nitrogen-vacancy centers ([NV(-)]) in nanodiamonds using nitrogen-rich type Ib diamond powders as the starting material. The nanodiamonds (10-100 nm in diameter) were prepared by ball milling of microdiamonds, in which the density of neutral and atomically dispersed nitrogen atoms ([N(0)]) was measured by diffuse reflectance infrared Fourier transform spectroscopy. A systematic measurement of the fluorescence intensities and lifetimes of the crushed monocrystalline diamonds as a function of [N(0)] indicated that [NV(-)] increases nearly linearly with [N(0)] at 100-200 ppm.

Two-photon excited fluorescence of nitrogen-vacancy centers in proton-irradiated type Ib diamond.

Two-photon fluorescence spectroscopy of negatively charged nitrogen-vacancy [(N-V)-] centers in type Ib diamond single crystals have been studied with a picosecond (7.5 ps) mode-locked Nd:YVO(4) laser operating at 1064 nm. The (N-V)- centers were produced by radiation damage of diamond using a 3 MeV proton beam, followed by thermal annealing at 800 degrees C.

Bright fluorescent nanodiamonds: no photobleaching and low cytotoxicity.

Diamond nanocrystals emit bright fluorescence at 600-800 nm after irradiation by a 3 MeV proton beam (5 x 1015 ions/cm2) and annealing at 800 degrees C (2 h) in vacuum. The irradiation/annealing process yields high concentrations of nitrogen-vacancy defect centers ( approximately 107 centers/mum3), making possible visualization of the individual 100 nm diamond crystallites using a fluorescence microscope. The fluorescent nanodiamonds (FND) show no sign of photobleaching and can be taken up by mammalian cells with minimal cytotoxicity.