Experimental quantum Byzantine agreement on a three-user quantum network with integrated photonics.

Quantum communication networks are crucial for both secure communication and cryptographic networked tasks. Building quantum communication networks in a scalable and cost-effective way is essential for their widespread adoption. Here, we establish a complete polarization entanglement-based fully connected network, which features an ultrabright integrated Bragg reflection waveguide quantum source, managed by an untrusted service provider, and a streamlined polarization analysis module, which requires only one single-photon detector for each user.

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.

Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrystalline diamond capping layers have been studied systematically.

Responsibility optimization of a high-speed InP/InGaAs photodetector with a back reflector structure.

Top-illuminated PIN photodetectors (PDs) are widely utilized in telecommunication systems, and more efforts have been focused on optimizing the optical responsibility and bandwidth for high-speed and capacity applications. In this work, we develop an integrated top-illuminated InP/InGaAs PIN PD with a back reflector by using a microtransfer printing (µ-TP) process. An improved µ-TP process, where the tether of silicon nitride instead of photoresist, is selected to support an underetched III-V device on an InP substrate before transfer.

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.

Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cutoff frequency (f) of 427 GHz, the maximum oscillation frequency (f) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices.