Exploring the environmental impact of crop production in China using a comprehensive footprint approach.

The carbon-nutrient-water cycles of farmland ecosystem not only provides support for crop production, but also has an impact on the environment. Comprehensively quantifying the impact of crop production on the environment can provide a basis for crop sustainable production. A series of environmental footprint approaches, including carbon footprint (CF), nitrogen footprint (NF) and water footprint (WF), were optimized to evaluate greenhouse gas (GHG) emissions, reactive nitrogen (Nr) loss and water resource consumption in crop production, and a comprehensive footprint method based on Endpoint modeling was proposed to evaluate the overall environmental impact of crop production in China.

Vertically stacked BiSe/MoTe heterostructure with large band offsets for nanoelectronics.

In recent years, two-dimensional material-based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to the flexible stacking, optical sensitivity, tunable detection band, and highly controllable conductivity behaviors. However, the existing structures are mainly focused on transition or post-transition metal chalcogenides and have been rarely investigated as topological insulator (such as BiSe or BiTe)-based tunneling heterostructures. Meanwhile, it is challenging to mechanically exfoliate the topological insulator thin nanoflakes because of the strong layer-by-layer interaction with shorter interlayer spacing.

High hole mobility in physical vapour deposition-grown tellurium-based transistors.

Carrier mobility is one of most important figures of merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted to the mobility improvement of two-dimensional (2D) materials regarded as promising candidates to complement the conventional semiconductors. Graphene has amazing mobility but suffers from zero bandgap.