Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling.

Electrically switchable magnetization is considered a milestone in the development of ultralow power spintronic devices, and it has been a long sought-after goal for electric-field control of magnetoresistance in magnetic tunnel junctions with ultralow power consumption. Here, through integrating spintronics and multiferroics, we investigate MgO-based magnetic tunnel junctions on ferroelectric substrate with a high tunnel magnetoresistance ratio of 235%. A giant, reversible and nonvolatile electric-field manipulation of magnetoresistance to about 55% is realized at room temperature without the assistance of a magnetic field.

Spatially Resolved Electric-Field Manipulation of Magnetism for CoFeB Mesoscopic Discs on Ferroelectrics.

Electric-field control of magnetism in ferromagnetic/ferroelectric multiferroic heterostructures is a promising way to realize fast and nonvolatile random-access memory with high density and low-power consumption. An important issue that has not been solved is the magnetic responses to different types of ferroelectric-domain switching. Here, for the first time three types of magnetic responses are reported induced by different types of ferroelectric domain switching with in situ electric fields in the CoFeB mesoscopic discs grown on PMN-PT(001), including type I and type II attributed to 109°, 71°/180° ferroelectric domain switching, respectively, and type III attributed to a combined behavior of multiferroelectric domain switching.