High Performance Graphene-C -Bismuth Telluride-C -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses.

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C /bismuth telluride/C /graphene vertical heterojunction phototransistor is proposed.