Publications by authors named "Yuan-Xiao Ma"

Article Synopsis
  • The development of a bio-inspired flexible artificial spiking photoreceptor (ASP) using a single VO Mott memristor allows for the simultaneous sensing of light and encoding it into spikes, crucial for spiking neural networks.
  • This ASP exhibits excellent photosensitivity across a wide range (405-808 nm), high flexibility, and durability, enabling it to function effectively even when bent.
  • An all-spike electronic retina architecture, consisting of ASPs and artificial optical nerves (AONs), has been proposed, demonstrating the capability to segment images successfully, which is a significant step towards creating efficient spike-based neuromorphic vision systems.
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Serving as neuromorphic hardware accelerators, memristors play a crucial role in large-scale neuromorphic computing. Herein, two-terminal memristors utilizing amorphous indium-gallium-zinc oxide (a-IGZO) are fabricated through room-temperature sputtering. The electrical characteristics of these memristors are effectively modulated by varying the oxygen flow during the deposition process.

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When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti content in the NdTiON is varied by co-sputtering a Ti target at 0 W, 10 W, 20 W and 30 W, respectively, while fixing the sputtering power of an Nd target at 45 W. High-performance OTFT is obtained for the 20 W-sputtered Ti, including a small threshold voltage of -0.

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