Publications by authors named "Yu-Zhu Gu"
Effects of ZnO seed layer annealing temperature on the characteristics of the n-ZnO nanowires/Al(2)O(3)/p-Si heterojunction are investigated. Well-aligned ZnO nanowires (NWs) are grown through a simple hydrothermal method. Both the insertion of Al(2)O(3) buffer layer and the annealing treatment of ZnO seed layer are advantageous for the growth of ZnO NWs.
View Article and Find Full Text PDFThe morphological, structural and photoluminescence properties of one-dimensional ZnO/HfO2 core-shell nanowires (NWs) with various thicknesses of HfO2 shell layers are studied in detail in this work. The ZnO NWs have been fabricated by a simple hydrothermal method, which are then coated by thin HfO2 shell layers using atomic layer deposition (ALD). The morphological and structural characterization demonstrates that the HfO2 shells with polycrystalline structures grow on the single-crystalline ZnO NWs conformally.
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- The n-ZnO/p-Si heterojunction was created using a 5 nm Al₂O₃ buffer layer via atomic layer deposition.
- X-ray diffraction analysis indicated that the presence of the Al₂O₃ layer enhanced the crystalline quality of the (100)-oriented ZnO films.
- The optimized 5 nm Al₂O₃ layer resulted in superior electrical performance, evidenced by a low dark current of 0.5 μA at -2 V and an 8-fold increase in the photo-to-dark current ratio, highlighting its benefits for photodetector applications.
Article Synopsis
- High-quality titanium (Ti)-doped zinc oxide (ZnO) films were created using atomic layer deposition (ALD) on different substrates, with varying amounts of Ti doping.
- The growth of ZnO was affected by alternating layers of ZnO and titanium dioxide (TiO2), showing a reduced growth rate for ZnO on TiO2, and a shift in diffraction peaks was noted as Ti concentration rose.
- All samples showed good optical transparency, exceeding 80% in the visible spectrum, with the best electrical properties (lowest resistivity) observed in the sample with a specific ALD cycle ratio of ZnO to TiO2.
ZnO/TiO2 nanolaminates were grown on Si (100) and quartz substrates by atomic layer deposition at 200°C using diethylzinc, titanium isopropoxide, and deionized water as precursors. All prepared multilayers are nominally 50 nm thick with a varying number of alternating TiO2 and ZnO layers. Sample thickness and ellipsometric spectra were measured using a spectroscopic ellipsometer, and the parameters determined by computer simulation matched with the experimental results well.
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