AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO as Passivation and Dielectric Layers.

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO is used to form the dielectric and passivation layers. The TiO film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM).

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors.

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO passivation layer to undoped AlGaN/GaN HEMT's increases the value of the third-order intercept point (OIP3) by up to 70% at 2.

Optical characterization of a GaAs/In(0.5)(AlxGa(1-x))(0.5)P/GaAs heterostructure cavity by piezoreflectance spectroscopy.

Optical properties of a lattice matched GaAs/In(0.5)(AlxGa(1-x))(0.5)P/GaAs heterostructure cavity have been characterized using piezoreflectance (PzR) measurements in the temperature range between 20 and 300 K.

Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices.

We present a practical experimental design for performing photoluminescence (PL) and photoreflectance (PR) measurements of semiconductors with only one PL spectroscopic system. The measurement setup is more cost efficient than typical PL-plus-PR systems. The design of the experimental setup of the PL-PR system is described in detail.