Publications by authors named "Yu-Ning Wei"
Article Synopsis
- Hot-carrier transistors utilize the excess energy of carriers for improved speed and performance, unlike traditional transistors which depend on steady energy levels.
- They are particularly valuable in high-speed applications like telecommunications and advanced computing but face limitations in power consumption and resistance.
- This study introduces a new hot-emitter transistor using graphene/germanium junctions that achieves remarkable efficiency and functionality, including a very low subthreshold swing and high inverter gain, indicating potential for future low-power technologies.
Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer.
View Article and Find Full Text PDFBackground: In studies of development and aging, the expression of many genes has been shown to undergo drastic changes at mRNA and protein levels. The connection between mRNA and protein expression level changes, as well as the role of posttranscriptional regulation in controlling expression level changes in postnatal development and aging, remains largely unexplored.
Results: Here, we survey mRNA and protein expression changes in the prefrontal cortex of humans and rhesus macaques over developmental and aging intervals of both species' lifespans.