Publications by authors named "Yu-Li Ho"
Micromachines (Basel)
April 2021
Article Synopsis
- Researchers developed normally-off p-GaN HEMT devices using a self-terminating etching technique that ensures precise etching depth and minimizes surface damage.
- They fabricated various devices with different gate widths and the number of fingers to analyze how these factors impacted output current density.
- The best performing device had a total gate width of 60 mm, achieving a threshold voltage of 2.2 V and a high drain current of 6.7 A.
