Crystallinity Effect on Electrical Properties of PEALD-HfO Thin Films Prepared by Different Substrate Temperatures.

Hafnium oxide (HfO) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various substrate temperatures. The growth per cycle, structural, morphology and crystalline properties of HfO films were measured by spectroscopic ellipsometer, grazing-incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR), field-emission scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy.

Compact GaO Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature.

Amorphous Gallium oxide (GaO) thin films were grown by plasma-enhanced atomic layer deposition using O plasma as reactant and trimethylgallium as a gallium source. The growth rate of the GaO films was about 0.6 Å/cycle and was acquired at a temperature ranging from 80 to 250 °C.