Memristor with a ferroelectric HfO layer: in which case it is a ferroelectric tunnel junction.

New interest in the implementation of ferroelectric tunnel junctions has emerged following the discovery of ferroelectric properties in HfO films, which are fully compatible with silicon microelectronics technology. The coercive electric field to switch polarization direction in ferroelectric HfO is relatively high compared to classical perovskite materials, and thus it can cause the migration of non-ferroelectric charges in HfO, namely charged oxygen vacancies. The charge redistribution would cause the change of the tunnel barrier shape and following change of the electroresistance effect.