Recognizing beam profiles from silicon photonics gratings using a transformer model.

Over the past decade, there has been extensive work in developing integrated silicon photonics (SiPh) gratings for the optical addressing of trapped ion qubits among the ion trap quantum computing community. However, when viewing beam profiles from gratings using infrared (IR) cameras, it is often difficult to determine the corresponding heights where the beam profiles are located. In this work, we developed transformer models to recognize the corresponding height categories of beam profiles in light from SiPh gratings.

Modelling and next-value prediction of beam propagation from grating structures using a simplified transformer model.

In this study, a simplified transformer model is used to perform next-value prediction on light coupled out from silicon photonics gratings to free space. Finite-difference time-domain (FDTD) simulation is performed to simulate the electric field (E-field) in laser light coupled from gratings with pitches of 0.6, 0.

Development of mixed pitch grating for the optical addressing of trapped Sr ion with data analysis techniques.

Mixed pitch gratings are developed for the optical addressing of trapped Sr ion by means of simulation and experimental measurement approaches. Meanwhile, Python-based data analysis techniques were developed to analyze simulated and measured beam profiles. A fixed pitch grating with a pitch of 1.

TiC (MXene) based field electron emitters.

As a novel class of two-dimensional materials, MXene has provoked tremendous progress for various applications in functional devices. Here, we pioneer a preliminary understanding on the field emission behavior of MXene for the first time. TiC paper is fabricated by using facile filtration method, and multiple vertical sheets appear on the surface of MXene paper with high electrical conductivity (2.

Enhanced field emission properties of carbon nanotube bundles confined in SiO pits.

It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement.

Field emission properties of SiO-wrapped CNT field emitter.

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO-wrapped CNTs.

Enhanced Carbon Nanotubes Growth Using Nickel/Ferrocene-Hybridized Catalyst.

Tall, crystalline carbon nanotubes (CNTs) are desired to successfully integrate them in various applications. As the crystallinity of CNTs improves with increasing growth temperatures, higher growth temperatures are required to obtain crystalline CNTs. However, in a typical chemical vapor deposition (CVD) process, CNT growth rate reduces when the growth temperature exceeds a specific level due to the degradation of the catalyst particles.