Bright near-surface silicon vacancy centers in diamond fabricated by femtosecond laser ablation.

We report the generation of single negatively charged silicon vacancy (SiV) color centers by focusing a femtosecond (fs) laser on top of a high-purity diamond coated with a layer of Si nanoball. Under the interaction of a high-intensity fs laser, Si atoms were ionized and implanted into the diamond, accompanied with the creation of vacancies. After annealing at 850°C in vacuum for 1 h, the photoluminescence spectra of bright spots around the created crater presented a typical strong zero-phonon line at around 737 nm of SiV centers.

Tuning Plasmonic Enhancement of Single Nanocrystal Upconversion Luminescence by Varying Gold Nanorod Diameter.

Plasmonic enhancement induced by metallic nanostructures is an effective strategy to improve the upconversion efficiency of lanthanide-doped nanocrystals. It is demonstrated that plasmonic enhancement of the upconversion luminescence (UCL) of single NaYF :Yb /Er /Mn nanocrystal can be tuned by tailoring scattering and absorption cross sections of gold nanorods, which is synthesized wet chemically. The assembly of the single gold nanorod and single upconversion nanocrystal is achieved by the atomic force microscope probe manipulation.

Investigation of the silicon vacancy color center for quantum key distribution.

Single photon sources (SPS) are crucial for quantum key distribution. Here we demonstrate a stable triggered SPS at 738 nm with linewidth less than 5 nm at room temperature based on a negatively charged single silicon vacancy color center. Thanks to the short photon duration of about 1.

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond.

Single-photon emitters with stable and uniform photoluminescence properties are important for quantum technology. However, in many cases, colour centres in diamond exhibit spectral diffusion and photoluminescence intensity fluctuation. It is therefore essential to investigate the dynamics of colour centres at the single defect level in order to enable the on-demand manipulation and improved applications in quantum technology.