A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation.

This paper presents an ultra-low-power voltage reference designed in 180 nm CMOS technology. To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering (DIBL) effect of the 2-T core, thus improving the line sensitivity. This compensation circuit achieves a Monte-Carlo-simulated line sensitivity of 0.

A Low-Power Wide Dynamic-Range Current Readout Circuit for Ion-Sensitive FET Sensors.

This paper presents an amplifier-less and digital-intensive current-to-digital converter for ion-sensitive FET sensors. Capacitance on the input node is utilized as a residue accumulator, and a clocked comparator is followed for quantization. Without any continuous-time feedback circuit, the converter performs a first-order noise shaping of the quantization error.