Novel nanowire array based highly efficient quantum dot sensitized solar cell.

In this communication, a novel CdSe/CdS/ZnO nanowire array fabricated by a 3-step solution-based method was used as a photoanode of a quantum dot sensitized solar cell, which generated a maximum power conversion efficiency of 4.15%.

Synthesis and Characterization of ZnO Nanowire-CdO Composite Nanostructures.

ZnO nanowire-CdO composite nanostructures were fabricated by a simple two-step process involving ammonia solution method and thermal evaporation. First, ZnO nanowires (NWs) were grown on Si substrate by aqueous ammonia solution method and then CdO was deposited on these ZnO NWs by thermal evaporation of cadmium chloride powder. The surface morphology and structure of the synthesized composite structures were analyzed by scanning electron microscopy, X-ray diffraction and transmission electron microscopy.

Type-II CdS nanoparticle-ZnO nanowire heterostructure arrays fabricated by a solution process: enhanced photocatalytic activity.

We report a two-step, solution-based synthetic method to fabricate CdS nanoparticles-sensitized ZnO nanowire heterostructure arrays which showed enhanced photocatalytic activities in comparison with bare ZnO nanowire arrays.

Fabrication and characterization of ZnO nanoneedle array using metal organic chemical vapor deposition.

High density and vertically well-aligned ZnO nanoneedle arrays were fabricated on the ZnO thin film deposited on silicon substrates. The ZnO buffer layer and nanoneedles were synthesized by metal organic chemical vapor deposition using diethylzinc and oxygen gas. The ZnO buffer film was grown at 250 degrees C and the growth temperature of nanoneedles was in the range of 480-500 degrees C.

Controlled growth of well-aligned ZnO nanorod array using a novel solution method.

A simple method of synthesizing nanomaterials and the ability to control the size and position of them are crucial for fabricating nanodevices. In this work, we developed a novel ammonia aqueous solution method for growing well-aligned ZnO nanorod arrays on a silicon substrate. For ZnO nanorod growth, a thin zinc metal seed layer was deposited on a silicon substrate by thermal evaporation.

Direct growth of core-shell SiC-SiO(2) nanowires and field emission characteristics.

A simple, direct synthesis method was used to grow core-shell SiC-SiO(2) nanowires by heating NiO-catalysed silicon substrates. A carbothermal reduction of WO(3) provided a reductive environment and carbon source to synthesize crystalline SiC nanowires covered with SiO(2) sheaths at the growth temperature of 1000-1100 °C. Transmission electron microscopy showed that the SiC core was 15-25 nm in diameter and the SiO(2) shell layer was an average of 20 nm in thickness.