Se-Vacancy Healing with Substitutional Oxygen in WSe for High-Mobility p-Type Field-Effect Transistors.

Transition-metal dichalcogenides possess high carrier mobility and can be scaled to sub-nanometer dimensions, making them viable alternative to Si electronics. WSe is capable of hole and electron carrier transport, making it a key component in CMOS logic circuits. However, since the p-type electrical performance of the WSe-field effect transistor (FET) is still limited, various approaches are being investigated to circumvent this issue.