Fabrication and characterization of a double quantum dot structure.

We report the fabrication and characterization of a new type of double quantum dot (QD) structure. We utilize standard CMOS processing steps without any modification to fabricate the double QD. We form three CMOS poly-Si gates with oxide sidewall spacers in series on a silicon-on-insulator nanowire.

Fabrication of poly-silicon nano-wire transistors on plastic substrates.

We report the fabrication and characterization of poly-Si nanowire transistors on flexible substrates. The nanowire transistors are fabricated on a SiO2/Si substrate using conventional CMOS processes, and then they are transferred onto polyimide substrates. The transfer process is performed by spin-coating of polyimide, curing (annealing) of the polyimide layer, and removal of the SiO2 sacrificial layer.