Chemical vapor deposition-free solution-processed synthesis method for two-dimensional MoS atomic layer films.

In this study, a solution-processed synthesis method was developed and successfully synthesized large-scale and uniform MoS thin films without using chemical vapor deposition. The MoS precursor solution was formulated by a sulfur-dissolving method to obtain uniform coating properties. MoS thin film was prepared by simple spin-coating and a one-step annealing method.

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model.

Materials and optimized designs for human-machine interfaces via epidermal electronics.

Thin, soft, and elastic electronics with physical properties well matched to the epidermis can be conformally and robustly integrated with the skin. Materials and optimized designs for such devices are presented for surface electromyography (sEMG). The findings enable sEMG from wide ranging areas of the body.

Inkjet-printed In(2)O(3) thin-film transistor below 200 °C.

High-performance In2O3 thin-film transistors could be prepared by an inkjet-printing method below 200 °C with a single precursor and solvent formulation. The self-combustion reaction took place with the electrical properties of In2O3 at a low temperature of 147 °C, which was confirmed by X-ray photoelectron spectroacopy and thermal analysis. The electrical properties after postannealing at 200 °C were as follows: a mobility of 3.