Highly Effective and Efficient Self-Assembled Multilayer-Based Electrode Passivation for Operationally Stable and Reproducible Electrolyte-Gated Transistor Biosensors.

To ensure the operational stability of transistor-based biosensors in aqueous electrolytes during multiple measurements, effective electrode passivation is crucially important for reliable and reproducible device performances. This paper presents a highly effective and efficient electrode passivation method using a facile solution-processed self-assembled multilayer (SAML) with excellent insulation property to achieve operational stability and reproducibility of electrolyte-gated transistor (EGT) biosensors. The SAML is created by the consecutive self-assembly of three different molecular layers of 1,10-decanedithiol, vinyl-polyhedral oligomeric silsesquioxane, and 1-octadecanethiol.

Fabrication of Self-Healable, Robust Superhydrophobic Surfaces Using UV-Crosslinked Nanocomposite Films.

Studies on fabricating robust superhydrophobic surfaces by a low-cost method have been rare, despite the recent demand for nature-inspired superhydrophobic surfaces including self-healing ability in various industrial applications. Herein, we propose a fabrication method for self-healable, robust superhydrophobic nanocomposite films by facile solution-processed spray coating and UV curing. The components of the coating solution include functionalized hydrophobic silica nanoparticles for producing high roughness hierarchical textured structures with low surface energy, and UV-crosslinkable v-POSS and bi-thiol hydrocarbon molecules to improve the film stability.

Self-Assembled Hybrid Gate Dielectrics for Ultralow Voltage of Organic Thin-Film Transistors.

We developed self-assembled hybrid dielectric materials via a facile and low-temperature solution process. These dielectrics are used to facilitate ultralow operational voltage of organic thinfilm transistors. Self-assembly of bifunctional phosphonic acid and ultrathin hafnium oxide layers results in the self-assembled hybrid dielectrics.

Cross-Linked Organic-Inorganic Hybrid Composite Films for One-Step Fabrication of Robust Superhydrophobic Surfaces.

Despite the recent demands of bioinspired superhydrophobic surfaces with self-cleaning properties in various industrial applications, a low-cost fabrication method for superhydrophobic films with excellent stability has rarely been studied. Herein, we report a robust superhydrophobic organic- inorganic hybrid composites film produced via a facile one-step solution-process. As coating materials for the facile one-step fabrication of the robust superhydrophobic films, we included Al₂O₃ nanoparticles for micro/nano hierarchical dual-scale structures, alkylsilane for low surface energy, and organic cross-linkers for increasing the stability of the hybrid composite films.

UV-Cured Hafnium Oxide-Based Gate Dielectrics for Low-Voltage Organic and Amorphous Oxide Thin-Film Transistors.

In this study, we have fabricated hafnium oxide dielectrics for low-voltage organic and amorphous oxide thin-film transistors (TFTs) via a facile low-temperature solution method and investigated the electrical properties of these dielectrics. Hafnium oxide dielectric films can be easily fabricated by a sol-gel solution method and ultraviolet (UV) curing at room temperature. In addition, the surface energy of hafnium oxide films can be easily modified by using phosphonic-acid-based self-assembled monolayers.

Rationally Designed, Multifunctional Self-Assembled Nanoparticles for Covalently Networked, Flexible and Self-Healable Superhydrophobic Composite Films.

For constructing bioinspired functional films with various superhydrophobic functions, including self-cleaning, anticorrosion, antibioadhesion, and oil-water separation, hydrophobic nanomaterials have been widely used as crucial structural components. In general, hydrophobic nanomaterials, however, cannot form strong chemical bond networks in organic-inorganic hybrid composite films because of the absence of chemically compatible binding components. Herein, we report the rationally designed, multifunctional self-assembled nanoparticles with tunable functionalities of covalent cross-linking and hydrophobicity for constructing three-dimensionally interconnected superhydrophobic composite films via a facile solution-based fabrication at room temperature.

Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.

For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve high-performance, ultralow-voltage operation of thin-film transistors (TFTs). In this work, we first report on the facile fabrication of multifunctional hybrid multilayer gate dielectrics with tunable surface energy via a low-temperature solution-process to produce ultralow-voltage organic and amorphous oxide TFTs. The hybrid multilayer dielectric materials are constructed by iteratively stacking bifunctional phosphonic acid-based self-assembled monolayers combined with ultrathin high-k oxide layers.

Transparent, self-cleaning and waterproof surfaces with tunable micro/nano dual-scale structures.

The rational design and facile fabrication of optically transparent, superhydrophobic surfaces can advance their versatile applications, including optoelectronic devices. For the easily accessible and scalable preparation of transparent, superhydrophobic surfaces, various coating methods using a solution-process have been developed. However, obtaining highly transparent, non-wetting surfaces with excellent properties is challenging due to the difficulty in controlling surface roughness.

Low Temperature Solution-Processed Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors.

We report on the design, preparation, and electrical properties of novel solution-processed organic-inorganic hybrid dielectric films for the low-voltage operation of organic field-effect transistors (OFETs). Hybrid dielectric thin films (-20 nm thick) are easily fabricated by spin-coating a zirconium chloride precursor/organic additive reagent mixture, followed by annealing at low temperatures (-150 degrees C). The smooth and transparent hybrid dielectrics exhibit great insulating properties (leakage current densities -10(-7) A/cm2 at 2 MV/cm), high capacitance (170 nF/cm2).

Development of omniphobic behavior in molecular self-assembled monolayer-coated nanowire forests.

The wetting characteristics of self-assembled monolayers (SAMs) on three different surface structures of thin film, microcone array, and nanowire forest topologies, which were chemically modified using phosphonic acid (HDF-PA and OD-PA) and trichlorosilane (HDF-S), were investigated. The molecular SAM-coated nanowire forest structures exhibited superhydrophobic properties with contact angles of 150.6°-155.

Hybrid gate dielectric materials for unconventional electronic circuitry.

Recent advances in semiconductor performance made possible by organic π-electron molecules, carbon-based nanomaterials, and metal oxides have been a central scientific and technological research focus over the past decade in the quest for flexible and transparent electronic products. However, advances in semiconductor materials require corresponding advances in compatible gate dielectric materials, which must exhibit excellent electrical properties such as large capacitance, high breakdown strength, low leakage current density, and mechanical flexibility on arbitrary substrates. Historically, conventional silicon dioxide (SiO2) has dominated electronics as the preferred gate dielectric material in complementary metal oxide semiconductor (CMOS) integrated transistor circuitry.

Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics.

Uniformity of the dielectric breakdown voltage distribution for several thicknesses of a zirconia-based self-assembled nanodielectric was characterized using the Weibull distribution. Two regimes of breakdown behavior are observed: self-assembled multilayers >5 nm thick are well described by a single two-parameter Weibull distribution, with β ≈ 11. Multilayers ≤5 nm thick exhibit kinks on the Weibull plot of dielectric breakdown voltage, suggesting that multiple characteristic mechanisms for dielectric breakdown are present.

Solution-deposited organic-inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors.

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable π-electron phosphonic acid building blocks and ultrathin ZrO(2) layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambient atmosphere. Attractive Zr-SAND properties include amenability to accurate control of film thickness, large-area uniformity, well-defined nanostructure, exceptionally large electrical capacitance (up to 750 nF/cm(2)), excellent insulating properties (leakage current densities as low as 10(-7) A/cm(2)), and excellent thermal stability.

Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics.

We report here on the design, synthesis, processing, and dielectric properties of novel cross-linked inorganic/organic hybrid blend (CHB) dielectric films which enable low-voltage organic thin-film transistor (OTFT) operation. CHB thin films (20-43 nm thick) are readily fabricated by spin-coating a zirconium chloride precursor plus an α,ω-disilylalkane cross-linker solution in ambient conditions, followed by curing at low temperatures (~150 °C). The very smooth CHB dielectrics exhibit excellent insulating properties (leakage current densities ~10(-7) A/cm(2)), tunable capacitance (95-365 nF/cm(2)), and high dielectric constants (5.

How water meets a very hydrophobic surface.

Is there a low-density region ("gap") between water and a hydrophobic surface? Previous x-ray and neutron reflectivity results have been inconsistent because the effect (if any) is subresolution for the surfaces studied. We have used x-ray reflectivity to probe the interface between water and more hydrophobic smooth surfaces. The depleted region width increases with contact angle and becomes larger than the resolution, allowing definitive measurements.

High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors.

Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn(4)Sn(4)O(15), grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn(2+) incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of approximately 90 cm(2) V(-1) s(-1) (104 cm(2) V(-1) s(-1) maximum obtained for patterned ZITO films), with I(on)/I(off) ratio approximately 10(5), a subthreshhold swing of approximately 0.2 V/dec, and operating voltage <2 V for patterned devices with W/L = 50.

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.

Low-temperature solution-processed amorphous indium tin oxide field-effect transistors.

Amorphous indium tin oxide (ITO)-based thin-film transistors (TFTs) were fabricated on various dielectrics [SiO(2) and self-assembled nanodielectrics (SANDs)] by spin-coating an ITO film precursor solution consisting of InCl(3) and SnCl(4) as the sources of In(3+) and Sn(4+), respectively, methoxyethanol (solvent), and ethanolamine (base). These films can be annealed at temperatures T(a) < or = 250 degrees C and afford devices with excellent electrical characteristics. The optimized [In(3+)]/[In(3+) + Sn(4+)] molar ratio (0.

Printable cross-linked polymer blend dielectrics. Design strategies, synthesis, microstructures, and electrical properties, with organic field-effect transistors as testbeds.

We report here the synthesis and dielectric properties of optimized, cross-linked polymer blend (CPB) dielectrics for application in organic field-effect transistors (OFETs). Novel silane cross-linking reagents enable the synthesis of CPB films having excellent quality and tunable thickness (from 10 to approximately 500 nm), fabricated both by spin-coating and gravure-printing. Silane reagents of the formula X 3Si-R-SiX 3 (R = -C 6H 12- and X = Cl, OAc, NMe 2, OMe, or R = -C 2H 4-O-C 2H 4- and X = OAc) exhibit tunable reactivity with hydroxyl-containing substrates.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics.

Studies of tetracene- and pentacene-based organic thin-film transistors fabricated by the neutral cluster beam deposition method.

The neutral cluster beam deposition (NCBD) method has been applied to produce and characterize organic thin-film transistors (OTFTs) based upon tetracene and pentacene molecules as active layers. Organic thin films were prepared by the NCBD method on hexamethyldisilazane (HMDS)-untreated and -pretreated silicon dioxide (SiO2) substrates at room temperature. The surface morphology and structures for the tetracene and pentacene thin films were examined by atomic force microscopy (AFM) and X-ray diffraction (XRD).