Publications by authors named "Young Dahl Jho"

We report on new THz electromagnetic emission mechanism from deformational coupling of acoustic (AC) phonons with electrons in the propagation medium of non-polar Si. The epicenters of the AC phonon pulses are the surface and interface of a GaP transducer layer whose thickness (d) is varied in nanoscale from 16 to 45 nm. The propagating AC pulses locally modulate the bandgap, which in turn generates a train of electric field pulses, inducing an abrupt drift motion at the depletion edge of Si.

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The strain occurs spontaneously at the heterogeneous interfaces of virtually all crystalline materials. Consequently, the analysis across multiple interfaces requires a complementary characterization scheme with a resolution that fits the deformation scale. By implementing two-photon confocal laser scanning nanoscopy with an axial resolution of 10 nm, we extract the surface strain from the photoluminescence (PL) spectra, epitomized by a 2-fold enhancement at the tapered tips in comparison to the substrate of ZnO nanorods.

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CuZnSn(S,Se) (CZTSSe) solar cells with low cost and eco-friendly characteristics are attractive as future sources of electricity generation, but low conversion efficiency remains an issue. To improve conversion efficiency, a method of inserting intermediate layers between the CZTSSe absorber film and the Mo back contact is used to suppress the formation of MoSe and decomposition of CZTSSe. Among the candidates for the intermediate layer, graphene oxide (GO) and reduced GO have excellent properties, including high-charge mobility and low processing cost.

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Crystalline solids exhibiting glass-like thermal conductivity have attracted substantial attention both for fundamental interest and applications such as thermoelectrics. In most crystals, the competition of phonon scattering by anharmonic interactions and crystalline imperfections leads to a non-monotonic trend of thermal conductivity with temperature. Defect-free crystals that exhibit the glassy trend of low thermal conductivity with a monotonic increase with temperature are desirable because they are intrinsically thermally insulating while retaining useful properties of perfect crystals.

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We recently implemented highly sensitive detection systems for photo-sensitizing potassium ions (K) based on two-step Förster resonance energy transfer (FRET). As a successive study for quantitative understanding of energy transfer processes in terms of the exciton population, we investigated the fluorescence decay dynamics in conjugated polymers and an aptamer-based 6-carboxyfluorescein (6-FAM)/6-carboxytetramethylrhodamine (TAMRA) complex. In the presence of K ions, the Guanine-rich aptamer enabled efficient two-step resonance energy transfer from conjugated polymers to dyed pairs of 6-FAM and TAMRA through the G-quadruplex phase.

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We report a cavity-dumped optical parametric oscillator (OPO) with a ring-type cavity configuration, which is based on periodically poled lithium niobate gain synchronously pumped by a mode-locked Ti:sapphire laser. Because of reduced cavity loss and group velocity dispersion inherent to ring-cavity employment, a wide wavelength tuning capability from 1.02 to 1.

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van der Waals (vdW) heterostructures are a central focus of materials science and condensed matter physics due to the novel physical phenomena and properties obtained by precisely stacking heterogeneous atomically thin layers. vdW heterostructures are expected to allow for the coherent manipulation of THz lattice vibrations and hence heat conduction due to the ability to precisely control chemical composition at the atomic scale, but little work has focused on thermal transport in these materials. Here, we report an ab initio study of thermal transport in vdW superlattices consisting of alternating transition metal dichalcogenide atomic layers.

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Four series of borosilicate glasses modified by alkali oxides and doped with Tb and Sm ions were prepared using the conventional melt quenching technique, with the chemical composition 74.5B O + 10SiO + 5MgO + R + 0.5(Tb O /Sm O ) [where R = 10(Li O /Na O/K O) for series A and C, and R = 5(Li O + Na O/Li O + K O/K O + Na O) for series B and D].

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We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction.

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Heat conduction in graphite has been studied for decades because of its exceptionally large thermal anisotropy. While the bulk thermal conductivities along the in-plane and cross-plane directions are well-known, less understood are the microscopic properties of the thermal phonons responsible for heat conduction. In particular, recent experimental and computational works indicate that the average phonon mean free path (MFP) along the c-axis is considerably larger than that estimated by kinetic theory, but the distribution of MFPs remains unknown.

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We devised directionally controllable THz emission sources based on lateral composition modulation (LCM) structures. LCM structures were composed of In-rich Ga0.47In0.

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We investigate the polarizability of terahertz (THz) waves emitted from undoped In0.2Ga0.8As nanowires (NWs).

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The influence of carrier localization and polarization-induced electric fields on the spectral variation of photoluminescence was comparatively studied in polar and semipolar InxGa1-x N/GaN strained quantum wells embedded in p-i-n diodes. Two representative structures with x = 0.16 for polar (0001) diodes and potential fluctuations for semipolar diodes grown along (1122) direction have been investigated with a reverse bias up to -4 V.

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We have investigated THz radiation characteristics along different directions, either reflective or along lateral by using InAs-based heterostructures. Firstly, we demonstrate the phase shift with InAs layer thickness, revealing the change of dominant THz wave generation mechanism along both directions. Along the lateral direction, the time-domain signals in thin InAs epilayers showed an abrupt phase and amplitude change at certain time delays which suggest the interference between two rays at the photoconductive switch.

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We have studied the characteristics of longitudinal-optical-phonon-plasmon coupled (LOPC) mode by using the ultrashort pulsed laser with 45 THz bandwidth as a function of thickness in InAs epilayers, ranging from 10 to 900 nm. We have observed the LOPC modes split into the upper (L(+) mode) and the lower (L(-) mode) branches only in the classical scale, but the longitudinal-optical (LO) phonon peak was persistently observed. The shorter decay time of the plasmon-like L(+) modes rather than the phonon-like L(-) modes should be associated with carrier-carrier scattering which is further considered with diffusion properties in the low-gap semiconductors.

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The terahertz (THz) radiation from transient dipoles, formed by distinct diffusion coefficients between oppositely charged carriers as often observed in low band gap semiconductors, propagates with an anisotropic amplitude distribution perpendicular to the dipole axis along the diffusive motion. By directionally adjusting the electronic diffusion, we conceptualize groove-patterned THz emitters based on (100) InAs thin films and demonstrate the unidirectional radiation. Line-of-sight emission along the surface-normal direction is greatly enhanced in a distributed asymmetric trapezoid with its period similar to the electronic diffusion length of InAs.

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We report a simple method of creating terahertz waves by applying the photo-Dember effect in a (100)-oriented InAs film coated onto the 45-degree wedged-end facet of an optical fiber. The terahertz waves are generated by infrared pulses guided through the optical fiber which is nearly in contact with a sample and then measured by a conventional photo-conductive antenna detector. Using this alignment-free terahertz source, we performed proof-of-principle experiments of terahertz time-domain spectroscopy and near-field terahertz microscopy.

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