Radiative Thermal Memristor.

Based on the thermal hysteresis of a phase change material exchanging radiative heat with a phase invariable one, we propose a radiative thermal memristor characterized by a Lissajous curve between their exchanged heat flux and temperature difference periodically modulated in time. For a memristor with terminals of VO_{2} and a blackbody, it is shown that (i) the temperature variations of its memristance follow a closed loop determined by the thermal hysteresis width of VO_{2}, and (ii) the thermal memristance on-off ratio is determined by the contrast of VO_{2} emissivities for its insulating and metallic phases and is equal to 3.6.

Thermophysical characterisation of VO thin films hysteresis and its application in thermal rectification.

Hysteresis loops exhibited by the thermophysical properties of VO thin films deposited on either a sapphire or silicon substrate have been experimentally measured using a high frequency photothermal radiometry technique. This is achieved by directly measuring the thermal diffusivity and thermal effusivity of the VO films during their heating and cooling across their phase transitions, along with the film-substrate interface thermal boundary resistance. These thermal properties are then used to determine the thermal conductivity and volumetric heat capacity of the VO films.

Polaritonic figure of merit of plane structures.

Based on the ability of plane structures to simultaneously optimize the propagation, confinement, and energy of surface plasmon-polaritons or surface phonon-polaritons, we develop the polaritonic figure of merit Z = βRΛ/δ, where βR, Λ and δ are the longitudinal wave vector, propagation length, and penetration depth, respectively. Explicit and analytical expressions of Z are derived for a single interface and a suspended thin film, as functions of the material permittivities and the film thickness. Higher Z are obtained for thinner films and smaller energy losses.

Quantum thermal diode based on two interacting spinlike systems under different excitations.

We demonstrate that two interacting spinlike systems characterized by different excitation frequencies and coupled to a thermal bath each, can be used as a quantum thermal diode capable of efficiently rectifying the heat current. This is done by deriving analytical expressions for both the heat current and rectification factor of the diode, based on the solution of a master equation for the density matrix. Higher rectification factors are obtained for lower heat currents, whose magnitude takes their maximum values for a given interaction coupling proportional to the temperature of the hotter thermal bath.

Quantum Thermal Transistor.

We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism.

Radiative thermal rectification between SiC and SiO2.

By means of fluctuational electrodynamics, we calculate radiative heat flux between two planar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit thermal rectification, a property with potential applications in thermal regulation.