Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited HfZrO Thin Films via Atomic Layer Deposition.

HfZrO (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low concentrations. While doping with Y improves the ferroelectric properties, there has been limited research on Y-HZO thin films fabricated using atomic layer deposition (ALD).

Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited atomic layer deposition using cyclopentadienyl-based precursors without annealing.

HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-centrosymmetric orthorhombic phase) has been achieved through annealing using a post-thermal process. However, in this study, we present the first report of ferroelectricity of hafnium-zirconium-oxide (HZO) thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without additional post-thermal processing.

Retrospective clinical evaluation of implant-assisted removable partial dentures combined with implant surveyed prostheses.

Statement Of Problem: Implant-assisted removable partial dentures (IARPDs) have been proposed as a treatment option for partially edentulous patients. However, evidence regarding the outcome of implant-assisted removable partial dentures with implant surveyed prostheses is limited.

Purpose: The purpose of this retrospective clinical study was to evaluate the clinical status and complications of IARPDs combined with implant surveyed prostheses in terms of clinical tissue condition, marginal bone resorption, and prosthetic complications.