ACS Appl Mater Interfaces
February 2021
In this study, a highly sensitive trilayer photodetector using Co-doped ZnFeO thin films annealed at 400 °C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferrite-thin-film/indium-tin-oxide on p-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and - characteristics under various conditions were comprehensively investigated.
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