The quantum oscillations in different probe configurations in the [Formula: see text] topological insulator macroflake.

We demonstrate quantum oscillations in [Formula: see text] topological insulator macroflakes in different probe configurations. The oscillation period in the local configuration is twice compared to the non-local configuration. The Aharonov-Bohm-like (AB-like) oscillation dominates the transport property in the local configuration and the Altshuler-Aronov-Spivak-like (AAS-like) oscillation dominates the transport property in the non-local configuration.

The Singularity Paramagnetic Peak of BiSbTe with p-type Surface State.

The magnetization measurement was performed in the BiSbTe single crystal. The magnetic susceptibility revealed a paramagnetic peak independent of the experimental temperature variation. It is speculated to be originated from the free-aligned spin texture at the Dirac point.

Observation of Landau Level-Dependent Aharonov-Bohm-Like Oscillations in a Topological Insulator.

We study the quantum oscillations in the BiSbTe topological insulator. In addition to the Shubnikov-de Haas (SdH) oscillation, the Aharonov-Bohm-like (ABL) oscillations are also observed. The ABL oscillation period is constant at each Landau level (LL) which is determined from the SdH oscillation.

The Extremely Enhanced Photocurrent Response in Topological Insulator Nanosheets with High Conductance.

The photocurrent was performed in topological insulator nanosheets with different conductances. The higher photocurrent is observed in the nanosheet with higher conductance. The responsivity is proportional to the nanosheet conductance over two orders.

The thickness-induced magneto-transport and optic properties enhancement in SbTe flakes.

The electric and optical properties were studied in SbTe with different thickness. It reveals the same resistivity at measured temperatures, but shows a larger magnetoresistance ratio at thicker flakes. All measured data conformed to a linear correlation between magnetoresistance ratio which is one-order enhanced, and mobility over a wide mobility range.

Enhancement of carrier transport characteristic in the SbSeTe topological insulators by N adsorption.

The carrier transport characteristics of SbSeTe topological insulators were investigated, after exposure to different levels of nitrogen gas. The magnetoresistance (MR) slope for the SbSeTe crystal increased by approximately 100% at 10 K after 2-days of exposure. The Shubnikov-de Haas (SdH) oscillation amplitude increased by 30% while oscillation frequencies remained the same.

Thickness-dependent conductance in SbSeTe topological insulator nanosheets.

The conductivity increases as thickness decreases in a series of SbSeTe topological insulator nanosheets with thickness ranging from 80 to 200 nm, where the sheet conductance is proportional to the thickness. The corresponding sheet conductance of the surface state is 8.7 e/h which is consistent with the values extracted from the temperature dependent Shubnikov-de Haas oscillations at high magnetic fields.

Extremely high-performance visible light photodetector in the SbSeTe nanoflake.

The photocurrent was performed in the SbSeTe topological insulator at a wavelength of 532 nm. It exhibits extremely high performance that the responsivity and the photoconductive gain reach 2293 AW and 5344 at 1 V. This high photoresponse is orders of magnitude higher than most reported values in topological insulators and two-dimensional transitional metal dichalcogenides.