Spectrally Narrow Blue-Light Emission from Nonstoichiometric AgGaS Quantum Dots for Application to Light-Emitting Diodes.

Luminescence color tuning of less toxic I-III-VI-based quantum dots (QDs) has been intensively investigated for application in wide-color-gamut displays. However, the emission peaks of these multinary QDs are relatively broad in the blue-light region compared to those in the green and red regions. Here, we report the synthesis of AgGaS (AGS) QDs that show a narrow blue emission peak through nonstoichiometry control and surface defect engineering.

One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a GaO matrix and enhancement of band-edge emission by Na doping.

I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a GaO matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission.

Development of Cu-In-Ga-S quantum dots with a narrow emission peak for red electroluminescence.

Narrowing the emission peak width and adjusting the peak position play a key role in the chromaticity and color accuracy of display devices with the use of quantum dot light-emitting diodes (QD-LEDs). In this study, we developed multinary Cu-In-Ga-S (CIGS) QDs showing a narrow photoluminescence (PL) peak by controlling the Cu fraction, i.e.

Simple and reliable direct patterning method for carbon-free solution-processed metal oxide TFTs.

Metal oxide TFT fabrication based on a solution-processing method is considered a promising alternative to conventional vacuum processing and has a number of advantages such as low cost, large-area fabrication, and process simplicity. A simple and reliable, direct patterning method for obtaining a carbon-free aqueous metal oxide film is presented herein. Patterning, which is achieved by selective photoreaction of water molecules under ultraviolet irradiation and by a safe, environment-friendly chemical etching process using a non-toxic organic acid, is followed by an annealing process at a temperature of 350 °C to obtain carbon-free metal oxide TFTs.

Ambipolar behavior of hydrogen-bonded diketopyrrolopyrrole-thiophene co-oligomers formed from their soluble precursors.

Organic field-effect transistors with hydrogen-bonded diketopyrrolopyrrole-thiophene co-oligomers were fabricated by a solution-process method with annealing at 200 °C, showing ambipolar charge-carrier transfer with field-effect mobilities up to μ(h) = 6.7 × 10(-3) cm(2) V(-1)s(-1) and μ(e) = 5.6 × 10(-3) cm(2) V(-1) s(-1).