High-Performance Visible-to-SWIR Photodetector Based on the Layered WS Heterojunction with Light-Trapping Pyramidal Black Germanium.

This study presents a layered transition metal dichalcogenide/black germanium (b-Ge) heterojunction photodetector that exhibits superior performance across a broad spectrum of wavelengths spanning from visible (vis) to shortwave infrared (SWIR). The photodetector includes a thin layer of b-Ge, which is created by wet etching of germanium (Ge) wafer to form submicrometer pyramidal structures. On top of this b-Ge layer, the WS thin film is deposited using pulsed laser deposition.