Characteristics of p-Type Conduction in P-Doped MoS by Phosphorous Pentoxide during Chemical Vapor Deposition.

We demonstrated p-type conduction in MoS grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A and E modes for both the pristine and P-doped samples was 19.