Publications by authors named "Yongwen Sun"

Nanoribbons (NRs) of atomic layer transition metal dichalcogenides (TMDs) can boost the rapidly emerging field of quantum materials owing to their width-dependent phases and electronic properties. However, the controllable downscaling of width by direct growth and the underlying mechanism remain elusive. Here, we demonstrate the vapor-liquid-solid growth of single crystal of single layer NRs of a series of TMDs (MeX: Me = Mo, W; X = S, Se) under chalcogen vapor atmosphere, seeded by pre-deposited and respective transition metal-alloyed nanoparticles that also control the NR width.

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Background: Mild cognitive impairment (MCI) is a critical transitional phase from healthy cognitive aging to dementia, offering a unique opportunity for early intervention. However, few studies focus on the correlation of brain structure and functional activity in patients with MCI due to Alzheimer's disease (AD). Elucidating the complex interactions between structural-functional (SC-FC) brain connectivity and glymphatic system function is crucial for understanding this condition.

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Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the role of short-range order (SRO) on material performance. However, the mechanisms of SRO formation and its precise control remain elusive, limiting the progress of SRO engineering. Here, leveraging advanced additive manufacturing techniques that produce samples with a wide range of cooling rates (up to 10K s) and an enhanced semi-quantitative electron microscopy method, we characterize SRO in three CoCrNi-based face-centered-cubic (FCC) MPEAs.

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Article Synopsis
  • The semiconductor industry is shifting to the 'More Moore' era, focusing on 3D integration to overcome the limitations of traditional 2D scaling in circuit design.
  • Innovations like monolithic 3D integration (M3D) offer potential improvements, but face challenges such as thermal processing issues that may impact performance.
  • Recent advancements include integrating two-dimensional materials, specifically WSe FETs, to achieve dense connections and implement vertical logic gates, showcasing progress in M3D integration for better circuit efficiency.
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n-type field effect transistors (FETs) based on two-dimensional (2D) transition-metal dichalcogenides (TMDs) such as MoS and WS have come close to meeting the requirements set forth in the International Roadmap for Devices and Systems (IRDS). However, p-type 2D FETs are dramatically lagging behind in meeting performance standards. Here, we adopt a three-pronged approach that includes contact engineering, channel length () scaling, and monolayer doping to achieve high performance p-type FETs based on synthetic WSe.

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Although the insertion of potassium ions into graphite has been proven to be realistic, the electrochemical performance of potassium-ion batteries (PIBs) is not yet satisfactory. Therefore, more effort is required to improve the specific capabilities and achieve a long cycling life. The mild carbonization process in molten salt (NaCl-KCl) is used to synthesize nitrogen/oxygen co-doped hierarchically porous carbon (NOPC) for PIBs by using cyanobacteria as the carbon source.

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