Impact of Hydroiodic Acid on Resistive Switching Performance of Lead-Free CsCuI Perovskite Memory.

Herein, we employed lead-free CsCuI perovskite films as the functional layers to construct Al/CsCuI/ITO memory devices and systematically investigated the impact on the corresponding resistive switching (RS) performance via adding different amounts of hydroiodic acid (HI) in CsCuI precursor solution. The results demonstrated that the crystallinity and morphology of the CsCuI films can be improved and the resistive switching performance can be modulated by adding an appropriate amount of HI. The obtained CsCuI films by adding 5 μL HI exhibit the fewest lattice defects and flattest surface (RMS = 13.

Opportunity of the Lead-Free All-Inorganic CsCuI Perovskite Film for Memristor and Neuromorphic Computing Applications.

Recently, several types of lead halide perovskites have been demonstrated as active layers in resistive switching memory or artificial synaptic devices for neuromorphic computing applications. However, the thermal instability and toxicity of lead halide perovskites severely restricted their further practical applications. Herein, the environmentally friendly and uniform CsCuI perovskite films are introduced to act as the active layer in the Ag/CsCuI/ITO memristor.