The Investigation of Hybrid PEDOT:PSS/β-GaO Deep Ultraviolet Schottky Barrier Photodetectors.

In this paper, the hybrid β-GaO Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-GaO interface.

Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors.

The existence of defects and traps in a transistor plays an adverse role on efficient charge transport. In response to this challenge, extensive research has been conducted on semiconductor crystalline materials in the past decades. However, the development of dielectric crystals for transistors is still in its infancy due to the lack of appropriate dielectric crystalline materials and, most importantly, the crystal morphology required by the gate dielectric layer, which is also crucial for the construction of high-performance transistor as it can greatly improve the interfacial quality of carrier transport path.

Synthesis of Large-Scale Single-Crystalline Monolayer WS₂ Using a Semi-Sealed Method.

As a two-dimensional semiconductor, WS₂ has attracted great attention due to its rich physical properties and potential applications. However, it is still difficult to synthesize monolayer single-crystalline WS₂ at larger scale. Here, we report the growth of large-scale triangular single-crystalline WS₂ with a semi-sealed installation by chemical vapor deposition (CVD).

Enhanced dielectric deposition on single-layer MoS with low damage using remote N plasma treatment.

Using remote N plasma treatment to promote dielectric deposition on the dangling-bond free MoS is explored for the first time. The N plasma induced damages are systematically studied by the defect-sensitive acoustic-phonon Raman of single-layer MoS, with samples undergoing O plasma treatment as a comparison. O plasma treatment causes defects in MoS mainly by oxidizing MoS along the already defective sites (most likely the flake edges), which results in the layer oxidation of MoS.

Synthesis of Vertically Standing MoS2 Triangles on SiC.

Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET).

Origin of yellow-band emission in epitaxially grown GaN nanowire arrays.

Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400-800 nm, whereas the insertion of Al/Au layers in GaN-sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading.